俄乌战争三星手机苹果手机退出小米手机超越TCXO爱普生温补晶振X1G005421020500
俄乌战争三星手机苹果手机退出小米手机超越TCXO爱普生温补晶振X1G005421020500
此前在俄乌战争爆发后三星手机从3月起暂停了对俄罗斯的出货.这一举措导致其在俄罗斯的市场份额大幅流失,从去年末的30%一路狂降至不足10%.如今,三星可能终于扛不住了.
由于苹果手机和三星手机都停止向俄供货,爱普生晶振导致市场份额大减,而中国智能手机品牌迅速抢占了俄罗斯的市场份额.根据俄罗斯最大的移动运营商MobileTeleSystemsPJSC(MTS)的数据,今年第二季度小米手机超越三星手机,成为俄罗斯最畅销的智能手机品牌.而在俄罗斯最畅销的前五名智能手机品牌中有三个是中国品牌.
TCXO爱普生温补晶振X1G005421020500,三星手机苹果手机小米手机晶振
爱普生晶振编码 | 型号 | 频率 | 长x宽x高 | 输出波 | 电源电压 | 频率偏差 | TCXO | 工作温度 |
X1G005421002900 | TG2520SMN | 19.200000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 3.135 to 3.465 V | +/-2.0 ppm | TCXO | 40 to +85 °C |
X1G005421003000 | TG2520SMN | 12.000000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 3.135 to 3.465 V | +/-2.0 ppm | TCXO | 30 to +85 °C |
X1G005421003700 | TG2520SMN | 16.384000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 1.700 to 1.900 V | +/-1.5 ppm | TCXO | 40 to +85 °C |
X1G005421003800 | TG2520SMN | 16.384000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 2.260 to 3.465 V | +/-1.5 ppm | TCXO | 40 to +85 °C |
X1G005421020100 | TG2520SMN | 16.368000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 1.700 to 1.900 V | +/-1.5 ppm | TCXO | -40 to +85 °C |
X1G005421020200 | TG2520SMN | 16.369000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 1.700 to 1.900 V | +/-1.5 ppm | TCXO | -40 to +85 °C |
X1G005421020300 | TG2520SMN | 19.200000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 1.700 to 1.900 V | +/-1.5 ppm | TCXO | -40 to +85 °C |
X1G005421020400 | TG2520SMN | 26.000000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 1.700 to 1.900 V | +/-1.5 ppm | TCXO | -40 to +85 °C |
X1G005421020500 | TG2520SMN | 32.000000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 1.700 to 1.900 V | +/-1.5 ppm | TCXO | -40 to +85 °C |
X1G005421020600 | TG2520SMN | 38.400000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 1.700 to 1.900 V | +/-1.5 ppm | TCXO | -40 to +85 °C |
X1G005421020700 | TG2520SMN | 40.000000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 1.700 to 1.900 V | +/-1.5 ppm | TCXO | -40 to +85 °C |
X1G005421020800 | TG2520SMN | 16.000000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 1.700 to 1.900 V | +/-1.5 ppm | TCXO | -40 to +85 °C |
X1G005421021100 | TG2520SMN | 20.000000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 1.700 to 1.900 V | +/-1.5 ppm | TCXO | -40 to +85 °C |
X1G005421021200 | TG2520SMN | 24.000000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 1.700 to 1.900 V | +/-1.5 ppm | TCXO | -40 to +85 °C |
X1G005421021300 | TG2520SMN | 25.000000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 1.700 to 1.900 V | +/-1.5 ppm | TCXO | -40 to +85 °C |
X1G005421021400 | TG2520SMN | 27.000000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 1.700 to 1.900 V | +/-1.5 ppm | TCXO | -40 to +85 °C |
X1G005421021500 | TG2520SMN | 30.000000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 1.700 to 1.900 V | +/-1.5 ppm | TCXO | -40 to +85 °C |
X1G005421021600 | TG2520SMN | 48.000000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 1.700 to 1.900 V | +/-1.5 ppm | TCXO | -40 to +85 °C |
X1G005421022000 | TG2520SMN | 52.000000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 1.700 to 1.900 V | +/-1.5 ppm | TCXO | -40 to +85 °C |
X1G005421022100 | TG2520SMN | 27.600000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 1.700 to 1.900 V | +/-1.5 ppm | TCXO | -40 to +85 °C |
X1G005421022200 | TG2520SMN | 50.000000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 1.700 to 1.900 V | +/-1.5 ppm | TCXO | -40 to +85 °C |
X1G005421030100 | TG2520SMN | 16.368000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 2.660 to 3.465 V | +/-1.5 ppm | TCXO | -40 to +85 °C |
X1G005421030200 | TG2520SMN | 16.369000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 2.660 to 3.465 V | +/-1.5 ppm | TCXO | -40 to +85 °C |
X1G005421030300 | TG2520SMN | 19.200000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 2.660 to 3.465 V | +/-1.5 ppm | TCXO | -40 to +85 °C |
X1G005421030400 | TG2520SMN | 26.000000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 2.660 to 3.465 V | +/-1.5 ppm | TCXO | -40 to +85 °C |
X1G005421030500 | TG2520SMN | 32.000000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 2.660 to 3.465 V | +/-1.5 ppm | TCXO | -40 to +85 °C |
X1G005421030600 | TG2520SMN | 38.400000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 2.660 to 3.465 V | +/-1.5 ppm | TCXO | -40 to +85 °C |
X1G005421030700 | TG2520SMN | 40.000000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 2.660 to 3.465 V | +/-1.5 ppm | TCXO | -40 to +85 °C |
X1G005421030800 | TG2520SMN | 16.000000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 2.660 to 3.465 V | +/-1.5 ppm | TCXO | -40 to +85 °C |
X1G005421031100 | TG2520SMN | 20.000000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 2.660 to 3.465 V | +/-1.5 ppm | TCXO | -40 to +85 °C |
X1G005421031200 | TG2520SMN | 24.000000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 2.660 to 3.465 V | +/-1.5 ppm | TCXO | -40 to +85 °C |
X1G005421031300 | TG2520SMN | 25.000000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 2.660 to 3.465 V | +/-1.5 ppm | TCXO | -40 to +85 °C |
X1G005421031400 | TG2520SMN | 27.000000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 2.660 to 3.465 V | +/-1.5 ppm | TCXO | -40 to +85 °C |
X1G005421031500 | TG2520SMN | 30.000000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 2.660 to 3.465 V | +/-1.5 ppm | TCXO | -40 to +85 °C |
X1G005421031600 | TG2520SMN | 48.000000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 2.660 to 3.465 V | +/-1.5 ppm | TCXO | -40 to +85 °C |
X1G005421032000 | TG2520SMN | 52.000000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 2.660 to 3.465 V | +/-1.5 ppm | TCXO | -40 to +85 °C |
X1G005421032100 | TG2520SMN | 27.600000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 2.660 to 3.465 V | +/-1.5 ppm | TCXO | -40 to +85 °C |
X1G005421032200 | TG2520SMN | 50.000000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 2.660 to 3.465 V | +/-1.5 ppm | TCXO | -40 to +85 °C |
X1G005421032400 | TG2520SMN | 10.000000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 2.260 to 3.465 V | +/-1.5 ppm | TCXO | 40 to +85 °C |
X1G005161000200 | TG2520CEN | 25.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 2.375 to 3.630 V | +/-2.0 ppm | TCXO | -40 to ++85 °C |
X1G005161000700 | TG2520CEN | 32.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 2.500 to 3.300 V | +/-2.0 ppm | TCXO | -40 to ++85 °C |
X1G005161000900 | TG2520CEN | 27.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 2.375 to 3.630 V | +/-2.0 ppm | TCXO | -40 to ++85 °C |
X1G005161001100 | TG2520CEN | 16.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 2.500 to 3.300 V | +/-2.0 ppm | TCXO | -40 to ++85 °C |
X1G005161001200 | TG2520CEN | 25.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 2.375 to 3.630 V | +/-2.0 ppm | TCXO | -40 to ++85 °C |
X1G005161001300 | TG2520CEN | 48.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 3.000 to 3.600 V | +/-2.0 ppm | TCXO | -40 to ++85 °C |
X1G005161001400 | TG2520CEN | 20.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 2.375 to 3.630 V | +/-2.0 ppm | TCXO | -40 to ++85 °C |
X1G005161001500 | TG2520CEN | 26.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 2.375 to 3.630 V | +/-2.0 ppm | TCXO | -40 to ++85 °C |
X1G005161001900 | TG2520CEN | 38.400000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 2.375 to 3.630 V | +/-2.0 ppm | TCXO | -40 to ++85 °C |
X1G005161002200 | TG2520CEN | 12.288000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 2.375 to 3.630 V | +/-2.0 ppm | TCXO | -40 to ++85 °C |
X1G005161002300 | TG2520CEN | 12.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 2.375 to 3.630 V | +/-2.0 ppm | TCXO | -40 to ++85 °C |
X1G005161002500 | TG2520CEN | 40.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 2.375 to 3.630 V | +/-2.0 ppm | TCXO | -40 to ++85 °C |
X1G005161002600 | TG2520CEN | 24.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 2.375 to 3.630 V | +/-2.0 ppm | TCXO | -40 to ++85 °C |
X1G005161002800 | TG2520CEN | 19.200000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 2.375 to 3.630 V | +/-2.0 ppm | TCXO | -40 to ++85 °C |
这一事实证明三星停止供货举措对市场份额的冲击力是显著的,而这可能也是三星急于回归俄罗斯市场的原因.值得注意的是,前不久俄罗斯贸易和工业部长丹尼斯·曼图罗夫曾表示,俄罗斯不排除会进口最新的iPhone14系列.如果苹果能重返俄罗斯,估计三星也不会远了.
TCXO爱普生温补晶振X1G005421020500,三星手机苹果手机小米手机晶振
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